1 transistor 2sd1330 silicon npn epitaxial planer type for low-voltage output amplification for muting for dc-dc converter n features l low collector to emitter saturation voltage v ce(sat) . l low on resistance r on . l high foward current transfer ratio h fe . l m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC71 3:emitter m type mold package 6.9 0.1 0.55 0.1 0.45 0.05 1.0 0.1 1.0 2.5 0.1 1.0 1.5 1.5 r0.9 r0.9 r0.7 0.4 0.85 3.5 0.1 2.0 0.2 2.4 0.2 1.25 0.05 4.1 0.2 4.5 0.1 2.5 2.5 1 2 3 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 25 20 12 1 0.5 600 150 C55 ~ +150 unit v v v a a mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance on resistanse symbol i cbo v cbo v ceo v ebo h fe1 *1 h fe2 v ce(sat) v be(sat) f t c ob r on *3 conditions v cb = 25v, i c = 0 i c = 10 m a, i e = 0 i c = 1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 2v, i c = 0.5a *2 v ce = 2v, i c = 1a *2 i c = 0.5a, i b = 20ma i c = 0.5a, i b = 50ma v cb = 10v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 25 20 12 200 60 typ 0.13 200 10 1.0 max 100 800 0.4 1.2 unit na v v v v v mhz pf w *1 h fe1 rank classification rank r s t h fe1 200 ~ 350 300 ~ 500 400 ~ 800 *2 pulse measurement *3 r on measurement circuit v b i b =1ma r on = 5 1000( w ) f=1khz v=0.3v 1k w v a v v v a ? b v b
2 transistor 2sd1330 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb r on i b 06 5 4 13 2 0 1.2 1.0 0.8 0.6 0.4 0.2 ta=25?c 2.5ma 2.0ma 1.5ma 0.5ma 1.0ma 3.0ma 3.5ma i b =4.0ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =25 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0 1200 1000 800 600 400 200 v ce =2v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 0 400 300 100 250 350 200 50 150 v cb =10v ta=25?c emitter current i e ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 0 24 20 16 12 8 4 i e =0 ta=25?c f=1mhz collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 f=1khz v=0.3v v b r on measuring circuit i b =1ma v a v base current i b ( ma ) on resistance r on ( w ) 0 160 40 120 80 140 20 100 60 0 1000 800 600 400 200 ambient temperature ta ( ?c ) collector power dissipation p c ( mw )
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